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Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress
[Image: see text] Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobilit...
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| Udgivet i: | Nano Lett |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
American Chemical Society
2021
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| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8289290/ https://ncbi.nlm.nih.gov/pubmed/33914543 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.1c00353 |
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