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Atomic origin of spin-valve magnetoresistance at the SrRuO(3) grain boundary
Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic enviro...
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| Publicat a: | Natl Sci Rev |
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| Autors principals: | , , , , , , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Oxford University Press
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8288863/ https://ncbi.nlm.nih.gov/pubmed/34692094 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1093/nsr/nwaa004 |
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