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Atomic origin of spin-valve magnetoresistance at the SrRuO(3) grain boundary

Defects exist ubiquitously in crystal materials, and usually exhibit a very different nature from the bulk matrix. Hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic enviro...

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Detalhes bibliográficos
Publicado no:Natl Sci Rev
Main Authors: Li, Xujing, Yin, Li, Lai, Zhengxun, Wu, Mei, Sheng, Yu, Zhang, Lei, Sun, Yuanwei, Chen, Shulin, Li, Xiaomei, Zhang, Jingmin, Li, Yuehui, Liu, Kaihui, Wang, Kaiyou, Yu, Dapeng, Bai, Xuedong, Mi, Wenbo, Gao, Peng
Formato: Artigo
Idioma:Inglês
Publicado em: Oxford University Press 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC8288863/
https://ncbi.nlm.nih.gov/pubmed/34692094
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1093/nsr/nwaa004
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