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Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se(2) Thin Films
Cu(In,Ga)Se(2) (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structura...
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| Pubblicato in: | Materials (Basel) |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8269732/ https://ncbi.nlm.nih.gov/pubmed/34203128 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14133596 |
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