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GaAs Nanomembranes in the High Electron Mobility Transistor Technology
A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In(0.23)Ga(0.77)As channel with a sheet electron concentration of 3....
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8269475/ https://ncbi.nlm.nih.gov/pubmed/34206408 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14133461 |
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