Wordt geladen...
Degradation Mechanisms for GaN and GaAs High Speed Transistors
We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability s...
Bewaard in:
| Gepubliceerd in: | Materials (Basel) |
|---|---|
| Hoofdauteurs: | , , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2012
|
| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5449049/ https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma5122498 |
| Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|