Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

BACKGROUND: Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that...

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Hlavní autoři: Chu, Byung Hwan, Kang, Byoung Sam, Hung, Sheng Chun, Chen, Ke Hung, Ren, Fan, Sciullo, Andrew, Gila, Brent P., Pearton, Stephen J.
Médium: Artigo
Jazyk:Inglês
Vydáno: Diabetes Technology Society 2010
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Original Articles
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC2825639/
https://ncbi.nlm.nih.gov/pubmed/20167182
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