Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

BACKGROUND: Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that...

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Detalhes bibliográficos
Main Authors: Chu, Byung Hwan, Kang, Byoung Sam, Hung, Sheng Chun, Chen, Ke Hung, Ren, Fan, Sciullo, Andrew, Gila, Brent P., Pearton, Stephen J.
Formato: Artigo
Idioma:Inglês
Publicado em: Diabetes Technology Society 2010
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Original Articles
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2825639/
https://ncbi.nlm.nih.gov/pubmed/20167182
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