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Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapti...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Chao, Yi-Jie, Yang, Kai-Wei, Su, Chi, Lin, Chrong-Jung, King, Ya-Chin
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2021
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC8254684/
https://ncbi.nlm.nih.gov/pubmed/34216286
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-021-03570-7
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