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Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes
This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapti...
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| Veröffentlicht in: | Nanoscale Res Lett |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2021
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8254684/ https://ncbi.nlm.nih.gov/pubmed/34216286 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-021-03570-7 |
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