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An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology. By exploiting the body biasing technique, the ava...
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| 出版年: | Sensors (Basel) |
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| 主要な著者: | , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2021
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8230464/ https://ncbi.nlm.nih.gov/pubmed/34200801 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21124014 |
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