Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy ([Formula: see text]). To...

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Detaylı Bibliyografya
Yayımlandı:Nanomaterials (Basel)
Asıl Yazarlar: Murzakhanov, Fadis F., Yavkin, Boris V., Mamin, Georgiy V., Orlinskii, Sergei B., Mumdzhi, Ivan E., Gracheva, Irina N., Gabbasov, Bulat F., Smirnov, Alexander N., Davydov, Valery Yu., Soltamov, Victor A.
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI 2021
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Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC8224795/
https://ncbi.nlm.nih.gov/pubmed/34067260
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061373
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