Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy ([Formula: see text]). To...

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Publicat a:Nanomaterials (Basel)
Autors principals: Murzakhanov, Fadis F., Yavkin, Boris V., Mamin, Georgiy V., Orlinskii, Sergei B., Mumdzhi, Ivan E., Gracheva, Irina N., Gabbasov, Bulat F., Smirnov, Alexander N., Davydov, Valery Yu., Soltamov, Victor A.
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2021
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC8224795/
https://ncbi.nlm.nih.gov/pubmed/34067260
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061373
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