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Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm(2)) of AlGaN/AlN/GaN heterostructur...
Kaydedildi:
| Yayımlandı: | Nanomicro Lett |
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| Asıl Yazarlar: | , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Springer Nature Singapore
2021
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8187690/ https://ncbi.nlm.nih.gov/pubmed/34138301 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s40820-021-00589-4 |
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