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Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference
Minimizing the variation in threshold voltage (V(t)) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently. In this work, a recent program scheme to write the cells from the top, for instance the 170th layer, to the bottom, the...
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| Pubblicato in: | Micromachines (Basel) |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8160891/ https://ncbi.nlm.nih.gov/pubmed/34065435 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12050584 |
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