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Unified Model for Laser Doping of Silicon from Precursors
Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification,...
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| Vydáno v: | Materials (Basel) |
|---|---|
| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8124229/ https://ncbi.nlm.nih.gov/pubmed/33947085 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14092322 |
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