Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when...

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Bibliographic Details
Published in:Nanomaterials (Basel)
Main Authors: Ben, Yuhao, Liang, Feng, Zhao, Degang, Wang, Xiaowei, Yang, Jing, Liu, Zongshun, Chen, Ping
Format: Artigo
Language:Inglês
Published: MDPI 2021
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Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC8074106/
https://ncbi.nlm.nih.gov/pubmed/33923643
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11041023
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