Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type Al(x)Ga((1−x))N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EB...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Micromachines (Basel)
Hlavní autoři: Jain, Barsha, Velpula, Ravi Teja, Patel, Moulik, Sadaf, Sharif Md., Nguyen, Hieu Pham Trung
Médium: Artigo
Jazyk:Inglês
Vydáno: MDPI 2021
Témata:
Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC8003968/
https://ncbi.nlm.nih.gov/pubmed/33801072
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030334
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky