Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type Al(x)Ga((1−x))N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EB...

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Bibliografische gegevens
Gepubliceerd in:Micromachines (Basel)
Hoofdauteurs: Jain, Barsha, Velpula, Ravi Teja, Patel, Moulik, Sadaf, Sharif Md., Nguyen, Hieu Pham Trung
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: MDPI 2021
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Article
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC8003968/
https://ncbi.nlm.nih.gov/pubmed/33801072
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030334
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