טוען...
Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers
To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type Al(x)Ga((1−x))N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EB...
שמור ב:
| הוצא לאור ב: | Micromachines (Basel) |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI
2021
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8003968/ https://ncbi.nlm.nih.gov/pubmed/33801072 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030334 |
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