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Electrical Characterizations of Planar Ga(2)O(3) Schottky Barrier Diodes
In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga(2)O(3) crystal substrate. At the current stage, for high resistance un-doped Ga(2)O(3) films and/or bulk substrates, the carrier concentration (and other electrical parameter...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7999765/ https://ncbi.nlm.nih.gov/pubmed/33802423 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12030259 |
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