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Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices

[Image: see text] Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microsc...

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Publicado en:ACS Appl Mater Interfaces
Autores principales: Wind, Lukas, Sistani, Masiar, Song, Zehao, Maeder, Xavier, Pohl, Darius, Michler, Johann, Rellinghaus, Bernd, Weber, Walter M., Lugstein, Alois
Formato: Artigo
Lenguaje:Inglês
Publicado: American Chemical Society 2021
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC7975277/
https://ncbi.nlm.nih.gov/pubmed/33683092
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.1c00502
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