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Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices
[Image: see text] Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microsc...
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| 出版年: | ACS Appl Mater Interfaces |
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| 主要な著者: | , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
American
Chemical Society
2021
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| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7975277/ https://ncbi.nlm.nih.gov/pubmed/33683092 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.1c00502 |
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