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Operando characterization of conductive filaments during resistive switching in Mott VO(2)

Vanadium dioxide (VO(2)) has attracted much attention owing to its metal–insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile sw...

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Detalhes bibliográficos
Publicado no:Proc Natl Acad Sci U S A
Main Authors: Cheng, Shaobo, Lee, Min-Han, Li, Xing, Fratino, Lorenzo, Tesler, Federico, Han, Myung-Geun, del Valle, Javier, Dynes, R. C., Rozenberg, Marcelo J., Schuller, Ivan K., Zhu, Yimei
Formato: Artigo
Idioma:Inglês
Publicado em: National Academy of Sciences 2021
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7936358/
https://ncbi.nlm.nih.gov/pubmed/33622788
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.2013676118
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