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Operando characterization of conductive filaments during resistive switching in Mott VO(2)
Vanadium dioxide (VO(2)) has attracted much attention owing to its metal–insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile sw...
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| Publicado no: | Proc Natl Acad Sci U S A |
|---|---|
| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7936358/ https://ncbi.nlm.nih.gov/pubmed/33622788 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.2013676118 |
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