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Operando characterization of conductive filaments during resistive switching in Mott VO(2)
Vanadium dioxide (VO(2)) has attracted much attention owing to its metal–insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile sw...
שמור ב:
| הוצא לאור ב: | Proc Natl Acad Sci U S A |
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| Main Authors: | , , , , , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
National Academy of Sciences
2021
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7936358/ https://ncbi.nlm.nih.gov/pubmed/33622788 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.2013676118 |
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