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Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additio...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Micromachines (Basel)
Päätekijät: Li, Yongwei, Liang, Ting, Lei, Cheng, Li, Qiang, Li, Zhiqiang, Ghaffar, Abdul, Xiong, Jijun
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2021
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC7926769/
https://ncbi.nlm.nih.gov/pubmed/33670001
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12020216
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