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Two-Color Infrared Sensor on the PbTe: In p-n Junction
A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured...
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| Publicado en: | Sensors (Basel) |
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| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7914514/ https://ncbi.nlm.nih.gov/pubmed/33567680 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21041195 |
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