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Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechan...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Nanomaterials (Basel)
Päätekijät: Shoji, Yasushi, Tamaki, Ryo, Okada, Yoshitaka
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2021
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC7911294/
https://ncbi.nlm.nih.gov/pubmed/33573008
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11020344
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