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Analytical Model for the Channel Maximum Temperature in Ga(2)O(3) MOSFETs
In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga(2)O(3) MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga(2)O(3) is anisotropic and decreases significantly with increasing temperature, which b...
में बचाया:
| में प्रकाशित: | Nanoscale Res Lett |
|---|---|
| मुख्य लेखकों: | , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer US
2021
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7876208/ https://ncbi.nlm.nih.gov/pubmed/33569659 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-021-03490-6 |
| टैग : |
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