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Prominent luminescence of silicon-vacancy defects created in bulk silicon carbide p–n junction diodes
We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originat...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7810994/ https://ncbi.nlm.nih.gov/pubmed/33452427 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-021-81116-8 |
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