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Role of dislocations in nitride laser diodes with different indium content
In this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All s...
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| Publicat a: | Sci Rep |
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| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2021
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7794241/ https://ncbi.nlm.nih.gov/pubmed/33420146 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-79528-z |
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