Calculation of Hole Concentrations in Zn Doped GaAs Nanowires

We have previously demonstrated that we can grow p-type GaAs nanowires using Zn doping during gold catalyzed growth with aerotaxy. In this investigation, we show how to calculate the hole concentrations in such nanowires. We base the calculations on the Zhang–Northrup defect formation energy. Using...

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Bibliografiska uppgifter
I publikationen:Nanomaterials (Basel)
Huvudupphovsmän: Johansson, Jonas, Ghasemi, Masoomeh, Sivakumar, Sudhakar, Mergenthaler, Kilian, Persson, Axel R., Metaferia, Wondwosen, Magnusson, Martin H.
Materialtyp: Artigo
Språk:Inglês
Publicerad: MDPI 2020
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Article
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC7765553/
https://ncbi.nlm.nih.gov/pubmed/33339116
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10122524
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