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Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS(2)/hBN Vertical Heterostructures
[Image: see text] Recent studies have revealed that van der Waals (vdW) heteroepitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to the formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the...
Gorde:
| Argitaratua izan da: | ACS Omega |
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| Egile Nagusiak: | , , , , , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
American Chemical Society
2020
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| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7745401/ https://ncbi.nlm.nih.gov/pubmed/33344821 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.0c04168 |
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