Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristi...

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Xehetasun bibliografikoak
Argitaratua izan da:Nat Commun
Egile Nagusiak: Huang, P., Riccardi, E., Messelot, S., Graef, H., Valmorra, F., Tignon, J., Taniguchi, T., Watanabe, K., Dhillon, S., Plaçais, B., Ferreira, R., Mangeney, J.
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2020
Gaiak:
Article
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC7018796/
https://ncbi.nlm.nih.gov/pubmed/32054848
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-14714-1
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