Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristi...

Disgrifiad llawn

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Nat Commun
Prif Awduron: Huang, P., Riccardi, E., Messelot, S., Graef, H., Valmorra, F., Tignon, J., Taniguchi, T., Watanabe, K., Dhillon, S., Plaçais, B., Ferreira, R., Mangeney, J.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group UK 2020
Pynciau:
Article
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC7018796/
https://ncbi.nlm.nih.gov/pubmed/32054848
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-14714-1
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