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Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristi...

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Détails bibliographiques
Publié dans:Nat Commun
Auteurs principaux: Huang, P., Riccardi, E., Messelot, S., Graef, H., Valmorra, F., Tignon, J., Taniguchi, T., Watanabe, K., Dhillon, S., Plaçais, B., Ferreira, R., Mangeney, J.
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group UK 2020
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC7018796/
https://ncbi.nlm.nih.gov/pubmed/32054848
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-020-14714-1
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