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High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO(2) TFTs, with a high field-effect mobility (μ(FE)) of 136 cm(2)/V...
שמור ב:
| הוצא לאור ב: | Nanomaterials (Basel) |
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| Main Authors: | , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI
2020
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7694091/ https://ncbi.nlm.nih.gov/pubmed/33126463 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10112145 |
| תגים: |
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