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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and HfO(2) gate dielectric layer. The γ-ray radiation ha...
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| 發表在: | Nanomaterials (Basel) |
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| Main Authors: | , , , , , , , , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
MDPI
2020
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| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7693284/ https://ncbi.nlm.nih.gov/pubmed/33143313 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10112175 |
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