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Short-Term Memory Dynamics of TiN/Ti/TiO(2)/SiO(x)/Si Resistive Random Access Memory
In this study, we investigated the synaptic functions of TiN/Ti/TiO(2)/SiO(x)/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently, it is necessary to coordinate the information...
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| Izdano u: | Nanomaterials (Basel) |
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| Glavni autori: | , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2020
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7559005/ https://ncbi.nlm.nih.gov/pubmed/32932656 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10091821 |
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