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Short-Term Memory Dynamics of TiN/Ti/TiO(2)/SiO(x)/Si Resistive Random Access Memory

In this study, we investigated the synaptic functions of TiN/Ti/TiO(2)/SiO(x)/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently, it is necessary to coordinate the information...

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Pubblicato in:Nanomaterials (Basel)
Autori principali: Cho, Hyojong, Kim, Sungjun
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI 2020
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Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC7559005/
https://ncbi.nlm.nih.gov/pubmed/32932656
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10091821
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