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A wideband cryogenic microwave low-noise amplifier
A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds...
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| Publicado no: | Beilstein J Nanotechnol |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Beilstein-Institut
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7537378/ https://ncbi.nlm.nih.gov/pubmed/33083196 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.11.131 |
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