A wideband cryogenic microwave low-noise amplifier

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds...

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Bibliographic Details
Main Authors: Boris I. Ivanov, Dmitri I. Volkhin, Ilya L. Novikov, Dmitri K. Pitsun, Dmitri O. Moskalev, Ilya A. Rodionov, Evgeni Il’ichev, Aleksey G. Vostretsov
Format: Artigo
Language:Inglês
Published: Beilstein-Institut 2020-09-01
Series:Beilstein Journal of Nanotechnology
Subjects:
cryogenic low-noise amplifier
high-electron-mobility transistor (hemt)
hemt amplifier
microwave cryogenic amplifier
microwave superconducting circuit readout
superconducting qubit readout
Online Access:https://doi.org/10.3762/bjnano.11.131
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