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High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors
In this study, we developed a high-performance extended-gate ion-sensitive field-effect transistor (EG-ISFET) sensor on a flexible polyethylene naphthalate (PEN) substrate. The EG-ISFET sensor comprises a tin dioxide (SnO(2)) extended gate, which acts as a detector, and an amorphous indium-gallium-z...
שמור ב:
| הוצא לאור ב: | Sci Technol Adv Mater |
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| Main Authors: | , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Taylor & Francis
2020
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7476522/ https://ncbi.nlm.nih.gov/pubmed/32939162 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2020.1775477 |
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