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Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body
Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, w...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2014
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4055887/ https://ncbi.nlm.nih.gov/pubmed/24923751 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05284 |
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