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Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body

Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, w...

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Bibliografski detalji
Glavni autori: Jang, Hyun-June, Cho, Won-Ju
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2014
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4055887/
https://ncbi.nlm.nih.gov/pubmed/24923751
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05284
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