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Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy...
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| Vydáno v: | Sci Rep |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7468238/ https://ncbi.nlm.nih.gov/pubmed/32879355 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-71514-9 |
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