Φορτώνει......
Synthesis, Characterization and Fabrication of Graphene/Boron Nitride Nanosheets Heterostructure Tunneling Devices
Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. Specifically, G/BNNS/metal, G/SiO(2), and G/BNNS/SiO(2) heterostru...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Nanomaterials (Basel) |
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| Κύριοι συγγραφείς: | , , , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI
2019
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6669619/ https://ncbi.nlm.nih.gov/pubmed/31252619 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9070925 |
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