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Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors
Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping...
שמור ב:
| הוצא לאור ב: | Nanomaterials (Basel) |
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| מחבר ראשי: | |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
MDPI
2020
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7466482/ https://ncbi.nlm.nih.gov/pubmed/32722171 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10081448 |
| תגים: |
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