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Highly-stable write-once-read-many-times switching behaviors of 1D–1R memristive devices based on graphene quantum dot nanocomposites

One diode and one resistor (1D–1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-voltage (I-V) curves for the Al/PMSSQ:GQDs/Al/p-Si/Al dev...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Sung, Sihyun, Wu, Chaoxing, Jung, Hyun Soo, Kim, Tae Whan
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6089909/
https://ncbi.nlm.nih.gov/pubmed/30104614
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-30538-y
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