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Highly-stable write-once-read-many-times switching behaviors of 1D–1R memristive devices based on graphene quantum dot nanocomposites
One diode and one resistor (1D–1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-voltage (I-V) curves for the Al/PMSSQ:GQDs/Al/p-Si/Al dev...
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| Veröffentlicht in: | Sci Rep |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group UK
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6089909/ https://ncbi.nlm.nih.gov/pubmed/30104614 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-30538-y |
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