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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2020
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7408462/ https://ncbi.nlm.nih.gov/pubmed/32707647 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10071404 |
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