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Biomaterial-Induced Stable Resistive Switching Mechanism in TiO(2) Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity
[Image: see text] Leakage of current in oxide layers is the main issue for higher speed and denser resistive random-access memory. Defect engineering played a substantial role in meeting this challenge by doping or producing controlled interstitial defects or active sites. These controlled active si...
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| Publicado no: | ACS Omega |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
American Chemical Society
2020
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| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7408193/ https://ncbi.nlm.nih.gov/pubmed/32775907 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.0c02410 |
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