Carregando...
Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon
It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Principais autores: | , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2020
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7387536/ https://ncbi.nlm.nih.gov/pubmed/32724185 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-69609-4 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|