A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf(0.5)Zr(0.5)O(2) Thin Films

The discovery of ferroelectricity in HfO(2)-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf(0.5)Zr(0.5)O(2) (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal...

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Detalhes bibliográficos
Publicado no:Materials (Basel)
Principais autores: Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Hwang, Su Min, Kim, Namhun, Jung, Yong Chan, Sahota, Akshay, Kim, Kihyun, Yu, Hyun-Yong, Cha, Pil-Ryung, Young, Chadwin D., Choi, Rino, Ahn, Jinho, Kim, Jiyoung
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7372450/
https://ncbi.nlm.nih.gov/pubmed/32630791
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13132968
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