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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf(0.5)Zr(0.5)O(2) Thin Films

The discovery of ferroelectricity in HfO(2)-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf(0.5)Zr(0.5)O(2) (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal...

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Bibliografische gegevens
Gepubliceerd in:Materials (Basel)
Hoofdauteurs: Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Hwang, Su Min, Kim, Namhun, Jung, Yong Chan, Sahota, Akshay, Kim, Kihyun, Yu, Hyun-Yong, Cha, Pil-Ryung, Young, Chadwin D., Choi, Rino, Ahn, Jinho, Kim, Jiyoung
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: MDPI 2020
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Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7372450/
https://ncbi.nlm.nih.gov/pubmed/32630791
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma13132968
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