Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature

Narrow bandgap semiconductor‐based photodetectors often suffer from high room‐temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3‐hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up...

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Shranjeno v:
Bibliografske podrobnosti
izdano v:Adv Sci (Weinh)
Main Authors: Dong, Yifan, Chen, Mengyu, Yiu, Wai Kin, Zhu, Qiang, Zhou, Guodong, Kershaw, Stephen V., Ke, Ning, Wong, Ching Ping, Rogach, Andrey L., Zhao, Ni
Format: Artigo
Jezik:Inglês
Izdano: John Wiley and Sons Inc. 2020
Teme:
Communications
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC7312319/
https://ncbi.nlm.nih.gov/pubmed/32596115
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202000068
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