Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature

Narrow bandgap semiconductor‐based photodetectors often suffer from high room‐temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3‐hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up...

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Библиографические подробности
Опубликовано в: :Adv Sci (Weinh)
Главные авторы: Dong, Yifan, Chen, Mengyu, Yiu, Wai Kin, Zhu, Qiang, Zhou, Guodong, Kershaw, Stephen V., Ke, Ning, Wong, Ching Ping, Rogach, Andrey L., Zhao, Ni
Формат: Artigo
Язык:Inglês
Опубликовано: John Wiley and Sons Inc. 2020
Предметы:
Communications
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC7312319/
https://ncbi.nlm.nih.gov/pubmed/32596115
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.202000068
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